| 摘要 |
PURPOSE:To obtain an Al wiring having a desired width by a method wherein a resist film-made mask of a predetermined pattern is provided on an Al thin film to form a wiring of minute pattern thereon, the entire face is covered with oxide film, an etching is provided, an oxide film having the width same as a wiring width is left in the side wall of resist film and an etching is provided for a thin film by using the oxide film as the mask. CONSTITUTION:An Al thin film 3 for forming a wiring of minute pattern is attached through SiO2 film 2 onto an Si substrate 1, and a photo resist film 4 formed as a predetermined pattern is provided thereon. Subsequently, an SiO2 film 5 having the same thickness as the thin film 3 is grown onto the entire face containing the foregoing area, a reactive ion etching is provided by using the gas of fluorocarbon like CF4 or CHF3 for reaction gas and the remaining area is removed while leaving the SiO2 film 5' along the side wall 4' of the film 4. Thereafter, the film 4 is removed by a plasma ashing, a plasma etching is provided by usng the film 5' for a mask to remove the film 3 in the exposed area and the unnecessary film 5' is removed to leave only a desired minute wiring 3'. |
