| 摘要 |
<p>A static semiconductor memory device comprises static memory cells (Mi) respectively connected to a pair of word lines (Wi) and the memory device further comprises a pair of diodes (D3, D4) for each bit line pair (Boo, B01) one end of each diode is connected to its corresponding bit line, so as to absorb the electric current from the bit line, and other end of each diode is commonly connected to a constant current source (13) via a switching transistor (Q7) which is controlled together with column-selecting transistors (Q3, Q4) according to a column-selecting signal (Yo). This prevents inadvertent writing into a newly-selected cell due to the delay between column selection and word selection, by selectively absorbing current from bit lines.</p> |
