| 摘要 |
<p>A field effect semiconductor device has a substrate (11) of a compound semiconductor in which an active region (15) is formed. A gate electrode (16) is formed on the active region. The gate electrode (16) comprises silicon and at least one refractory metal, but the composition of the gate electrode (16) varies through its thickness. For example, the gate electrode (16) is formed from a double layer (16A, 16B) structure in which the lower layer (16A) has a higher etching rate than the upper layer (16B). After etching, the portion of the gate electrode (16) which contacts the active region (15) is shorter than the portion of the gate electrode (16) remote from the active region (15). Thus a gate length of less than 1 micrometer can be provided.</p><p>Alternatives to the double layer (16A, 16B) structure for providing gate electrode (16) can be used. In each alternative, composition of the gate electrode (16) varies through its thickness so that different levels of the gate electrode (16) are subject to different etching rates.</p><p>Methods of manufacturing such a field effect semiconductor device are described.</p> |
