| 摘要 |
PURPOSE:To improve electrical characteristics by making the impurity of a collector region differ so that E grounding breakdown voltage is enlarged just under an E region and junction reverse dielectric resistance around a B region in a P-N junction separation type planer bipolar IC. CONSTITUTION:An additional additive region 29 having the same type as the collector region is formed around the base region shown in dotted lines in the planer type bipolar IC. Impurity concentration is made differ just under the emitter region and around the base region in the collector region, desired value is given to the emitter grounding breakdown voltage BV/CBO just under the emitter, and value larger than BVCBO is given to the junction reverse dielectric resistance around the base region. Accordingly, size in the lateral direction is minimized without lowering the emitter grounding breakdown voltage. |
