| 摘要 |
PURPOSE:To form an electrode and the thin film element by the same material and to improve an yield rate in manufacturing, by utilizing lift off technology. CONSTITUTION:An electrode pattern 4 is formed on a semiconductor substrate 1 via a silicon dioxide film 2. Then a resist pattern for patterning the thin film element is formed on the place where the thin film is not intended to be formed so as to leave resist 6. Then the thin film 3 is formed on the entire surface. Thereafter, by removing the resist 6 for patterning the thin film element, the thin film 3b which is formed on the resist 6 is lifted off, and the thin film element 3a is formed. At this time, the film thickness of the thin film element 3a is made to be 1,000Angstrom or less, and the film thickness of the resist 6 for patterning the thin film element is made to be 1mum or more. |
