| 摘要 |
PURPOSE:To improve reliability by forming an opposite conduction type anode region on the one main surface of a semiconductor substrate, a plane one conduction type cathode region with a projecting section and an anode electrode extending on the projecting section through an insulating protective film. CONSTITUTION:The P type anode region 10 is shaped to the N type semiconductor substrate 9, the N type cathode region 11 with the projecting section 11' is formed into said anode region 10, contacts 13 for extracting electrodes are bored to the insulating film 12, metallic electrodes are each molded, and 14 is used as an anode electrode and 15 as a cathode electrode. High voltage and high current pulses are applied to the anode at minus pole pressure and to the cathode at plus pole pressure, and a metallic layer 16 dissolved in silicon is formed. On the other hand, the metallic wiring 14 of an anode of a Zener diode is extended onto the cathode region 11 with the projection through the insulating film 12. |
