| 摘要 |
PURPOSE:To avoid descrepancy of metal wiring layers and cracking caused by accumulation of resin stress caused by high and low temperature difference by providing double-layer of organic films, one is hardened by ion-implantation and another is not affected by ion-implantation. CONSTITUTION:Diffused layer 2 and field insulation layer 3 are formed on surface of a semiconductor substrate 1 and apertures for contact are made. Then PSG film 6 is formed on the whole surface and photoresistor film 7 is formed by photoresistor coating. Then an aperture 5 for bonding-pad is made by the conventional photo-process. Then the surface skin layer of the photoresistor film is hardened and converted to the different substance 7'' by implanting high density ion such as P<+>, B<+>, Ar<+> or Sb<+>. The top photoresistor film 7'' has excellent mechanical strength and large protection efficiency and the bottom photoresistor 7' has pliability and protects the semiconductor from the stress. |
