| 摘要 |
PURPOSE:To obtain a small-sized PIN diode device, which can easily be mounted, by forming a plurality of the PIN diodes, which have different characteristics, particularly, the different thickness of the i layers, into the same chip. CONSTITUTION:The insulating layers 13 of oxide layers, etc. are shaped until they reach a P type high resistance substrate 10 except a region 12 in which the diodes are formed in order to electrically separate each PIN diode by using the semiconductor wafer shaped by growing an N type high resistance layer 11 on said P type substrate 10 in an epitaxial form. P<+> Layers 14 and N<+> layers 15 are each molded into the region 12, in which the diodes are formed, through diffusion, etc. The spaces 16, 16' of the P<+> layers 14 and the N<+> layers 15 are used as the thickness of the i layers, and the impedance characteristics of each PIN diode are determined by severally making these spaces differ. |
