| 摘要 |
PURPOSE:To incorporate a protective diode without expanding a chip by forming a protective diode region, which has breakdown voltage lower than breakdown voltage between the C.E of a transistor and the same conduction type as a base region, into a collector region. CONSTITUTION:A region 4 with the same conduction type as the B region of the transistor is shaped selectively surrounding the B region in the collector region 1, the through type diode region is formed by both regions, and the breakdown voltage of the diode region is lowered more than that of the transistor. The potential of the diode region 4 is equalized by electrically connecting the base or emitter of the transistor. Depletion layers extending to the collector region from each of the base region and the diode region are overlapped in the base region and the diode region. Accordingly, the diode for protection having necessary dynamic resistance can be incorporated without generating a parasitic effect. |
