| 摘要 |
PURPOSE:To improve the characteristics of an element, in an insulation isolating method in a semiconductor integrated circuit device, by reducing the width of an isolating band, implementing a highly integrated state, and reducing junction capacity. CONSTITUTION:An Si oxide film 2 and an Si nitride film 3 are formed on an Si substrate 1, a region which is to become the insulation isolating band is etched, and a groove 4 is formed. The substrate is oxidized, an Si oxide film 6 is formed on the side wall of the groove and the like, boron for a channel stopper is ion-implanted 9, and phosphorous glass 8 is deposited. Thereafter, heat treatment is performed so as to fluidize the phosphorous glass layer, and the groove 4 is buried. Then, the phosphorous glass 8, the Si nitride film 3, and the Si oxide film 2 are sequentially etched, and the Si surface of the element region 7 is exposed. |
