| 摘要 |
PURPOSE:To improve design allowance and manufacturing allowance by increasing the base impurity concentration in the vicinity of a collector junction so that it is higher than the base impurity concentration in the vicinity of an injector junction lateral transistor in the IIL. CONSTITUTION:An N type epitaxial layer 3 is grown on a P type substrate 1 via an N<+> type embedded layer 2. Thereafter, an injector and base layers 5 and 6 for an NPN transistor are formed by B diffusion. Then, an N<+> layer 7 is formed by the deposition of P (phosphorous). Thereafter, P is ion-implanted in the vicinity of the collector base junction, so that the base impurity concentration NB in the vicinity of the collector junction is higher than the base impurity concentration in the vicinity of the injector junction NA. In this constitution, current amplification factor beta1 in the IIL becomes large, and the design allowance and the manufacturing allowance are improved. |
