| 摘要 |
PURPOSE:To improve the junction characteristics on the heterogeneous junction surface and to increase the conversion efficiency of the photoelectric converting device by a method wherein a semi-insulating film, which is thick enough to flow a current on the junction surface of the device using the diode characteristics of a laminar structure, is provided on the subject device. CONSTITUTION:The transparrent electrode 43 with a prescribed thickness is formed on a transparrent substrate 44 made of glass or the like using a vacuum evaporating method, the electrode 43 is placed in a reaction furnace wherein conductive energy is used, and an N<+> type first semiconductor 42 is formed in the prescribed thickness. Subsequently, an intrinsic or substantially intrinsic second semiconductor 41 is formed, ammonia is brought into a plasmic state and introduced on the surface of the semiconductor 41, and then the above is nitrified and a nitride film of 5-10A in thickness is formed. On the surface of this nitride film, a P<+> type third semiconductor 45 is formed, and a semi-insulating film which is thick enough to flow a current is interposed between the second semiconductor 41 and the third semiconductor 45. Then, the second electrode 46 is provided on the semiconductor 45, an insulating or semi-insulating film is provided on the heterogeneous junction surface between P<+> or N<+> semiconductors 42 and 45, and an N<-> or P<-> substantially intrinsic semiconductor 41, and the improvement of the junction characteristics is achieved. |
