| 摘要 |
PURPOSE:To stabilize potential of a latent image at start of using a photoreceptor, and to obtain good copies since the start, by providing a thin photoconductive layer 10 times as high as a photoconductive layer in free carrier concentration and having the same conductivity type as said layer between said layer and an insulating layer on a substrate. CONSTITUTION:A photoconductive layer of an N type semiconductor, such as CdS containing Cu and Cl, and 5X10<11>/cm<3> free electron concentration is formed on a substrate, then, a thin CdS layer, about 2mum thick, containing Cu and Cl, In, and free electron concentration >=10 times as high as said layer, such as 8X10<12>/cm<3>, is formed on said layer by a sputtering method or the like, and on this thin film, an insulating layer is coated to make a photoreceptor. On the contrary, a P type semiconductor photoconductive layer (Se, 40mum thick, 5X10<5>/ cm<3> free pisitive hole concentration) may be formed and on this layer a 1mum thick Se-Te layer (10wt% Te, 3.5X10<8>/cm<3> free positive hole concentration) may be formed, thus permitting good copies to be obtained since the first sheet with a stabilized potential. |
