| 摘要 |
PURPOSE:To selectively diffuse an impurity without producing crystal defect in a crystal by forming an impurity diffusing mask of an SiO2 layer and an InGaAs layer having a lattice constant approximating to an InP layer. CONSTITUTION:A layer 2 having several mum of thickness made of indium phosphide containing n type impurity is formed on a substrate 1 made of indium phosphide containing n<+> type impurity. Then, a layer 3 having approx. 0.5mum of thickness made of indium arsenic gallium is formed on a layer made of indium phosphide while matching in lattice thereto. Further, a layer 4 having 300Angstrom of thickness made of dioxidized silicon having good masking property for the impurity diffusion is formed on the thin layer 2, and these two thin layers are patterned, thereby forming a mask. With the employment of this mask, an impurity diffused region 6 is formed in the crystal of the compound semiconductor. |
