| 摘要 |
PURPOSE:To avoid thinning of the sides of a resist pattern by a method wherein a readhering layer is applied to a layer to be etched and the resist pattern is formed on the readhering layer and, after the readhering layer is subjected to sputter-etching to form protective films on the sides of the resist pattern, the layer to be etched is etched. CONSTITUTION:A readhering layer 20 is applied to a layer 10 to be etched and a resist pattern 30 is formed on the readhering layer 20 and, after the readhering layer 20 is subjected to sputter-etching to form protective films 21 on the sides 31 of the resist pattern 30, the layer 10 to be etched is etched. As the protective films 21 are formed on the sides 31 of the resist pattern 30 on the layer 10 to be etched beforehand, when the layer 10 to be etched is etched, the sides 31 of the resist pattern 30 are protected by protective films 21. With this constitution, film-thinning at the sides 31 of the resist pattern 30 can be avoided.
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