| 摘要 |
<p>Optoelectronic enomissive diode consists of a semiconductor crystal (10) of which at least one surface layer (12) consists of Ga(1-x)AlxAs, this layer supporting locally a metallic contact structure (13). Specifically, before forming the contact structure, the surface is covered entirely with a film of titanium which is left in place, for part at least of its thickness, away from those areas to be occupied by the metal structure. Problems arising in mfr. of contacts due to the reactivity of the Ga, Al and As are overcome, and good contacts with the Ga(1-x)AlxAs are achieved. The Ti combines the role of keying agent between the contact metal and the surface with that of passivating element for the uncovered areas and the emissive areas in the case of electroluminescent diodes.</p> |
