| 摘要 |
PURPOSE:To obtain a negative type resist material of high performance made of specified methacrylate polymer, forming a micropattern by electron beam or X-ray lithography, and applicable to dry etching. CONSTITUTION:A resist is formed with a polymer having repeating units represented by formulaI. Methacrylate corresponding to each unit of formulaI is prepared by reacting methacrylic acid or a reactive acid deriv. thereof with p-, m- or o-bromo- or -chloro-substituted phenol or benzyl alcohol. The dry etching resistance of the resulting resist material is produced by benzene rings having a protective effect in the polymer. |
