| 摘要 |
PURPOSE:To obtain the crystal having a large grain diameter by a method wherein the CdS thin film is laminated while maintaining a substrate temperature range of 200-400 deg.C in the dilute gas atmosphere of 2X10<-1>-4X10<-1> Torr. CONSTITUTION:When the CdS thin film is laminated on a substrate using high frequency sputtering method, the substrate temperature is maintained at 200- 400 deg.C, especially at around 300 deg.C, and the dilute gas pressur is maintained at 2X10<-1>-4X10<-1> Torr, especially at 3.0X10<-1>Torr or thereabouts. As the dilute gas to be used for the above purpose, helium, argon, neon, krypton, xenon and the like may be used. When the dilute gas pressure is increased from 2X10<-1> to 3X10<-1> Torr or thereabouts, the grain diameter of the CdS crystal becomes larger, and when the gas pressure is further increased from 3X10<-1> to 4X10<-1> Torr, the grain diameter becomes smaller. Also, when the substrate temperature is increased from 200 deg.C to 300 deg.C, the grain diameter becomes larger, and when the temperature is increased further from 300 deg.C to 400 deg.C, the grain diameter becomes smaller. |
