| 摘要 |
PURPOSE:To prevent the generation of a crack of a layer insulating film by each selecting the temperature of heat treatment in a hydrogen atmosphere executed after forming drain and source electrodes or an electrode for connecting a photoconductive film to predetermined value. CONSTITUTION:The source electrode 18a and the drain electrode 18a are each shaped to the source and drain regions 13, 14 of a silicon substrate 11 in which a large number of MOS transistors are molded, and the first heat treatment is executed at the temperature of 450 deg.C or higher in the hydrogen atmosphere. The drain electrode 18a is coated with the insulating film, the electrode 21 for connecting the photoconductive film, which ohmic-contacts with the source electrode 18b and extends onto the insulating film 19, is formed, heat treatment is executed at the temperature lower than that of the first heat treatment only by at least 5 deg.C in the hydrogen atmosphere, the photoconductive film 20 is shaped onto the surface, and the whole is heated. Accordingly, the alloying of the drain electrode and the silicon substrate hardly advances when forming the insulating film, and the crack of the insulating film can be prevented. |
