| 摘要 |
PURPOSE:To utilize the area of a width section effectively by forming a diffusion resistor between a base and an emitter and a floating emitter by a common diffusion section. CONSTITUTION:An N type beltlike region 4 as the floating emitter is shaped into a P type base region 2 of a silicon board 1 while surrounding an N type emitter region 3. The beltlike region 4 is not closed and cut at one part, and ohmic-contacted with a base electrode in the emitter region at one end 41. The ohmic contact is attained by coating the end 42 of the region 4 with an aluminum layer in common with the base region 2, and the aluminum layer serves as the base electrode. |
