| 摘要 |
PURPOSE:To improve the positioning accuracy for the subject ion beam patterning device by a method wherein an ion beam patterning function, to be used for ion implantation, and an electron beam irradiating function, to be used for annealing, are provided in a vacuum chamber. CONSTITUTION:An ion beam irradiating system 1 and an electron beam irradiating system 2 are arranged in the vaccum chamber containing a sample-stand 3, the ion beam irradiating system 1 is connected to the first control system 5, the electron beam irradiating system 2 is connected to the second control system 6, the sample-stand 3 is connected to the third control system 7 respectively, and control systems 5-7 are connected to a computer 9 through the intermediary of an interface 8. After the sample-stand 3 has been adjusted by the control system 7 in such a manner that the semiconductor substrate fixed on the sample- stand 5 will be positioned directly below the ion beam irradiating system 1, an ion implantation is performed, and then after the ion implanting region on the substrate has been controlled by shifting the sample-stand 3 in such a manner that the substrate will be positioned directly under the electron beam irradiating system 2, an annealing is performed by irradiating an electron beam. |
