| 摘要 |
PURPOSE:To reduce the loss of a bipolar transistor by forming two regions among the three regions of an emitter, a base and a collector of the bipolar transistor by an amorphous semiconductor. CONSTITUTION:An N type amorphous semiconductor layer 2 as the base and a P type amorphous semiconductor layer 3 as the emitter are laminated onto a P type single crystal substrate 1 as the collector, a base metallic electrode 4 and an emitter electrode 5 are each drawn out of respective semiconductor layer 2, 3, and the bipolar transistor is formed. When the emitter is formed by the P type amorphous semiconductor in this manner, a material having large conductivity can also be used as the N type amorphous semiconductor constituting the base while keeping the efficiency of the emitter to sufficiently large value. Accordingly, additional resistance which does not contribute to transistor action in each emitter and base region is minimized, and the loss of the transistor is reduced. |
