发明名称 METHOD FOR LIQUID-PHASE EPITAXIAL GROWTH
摘要 PURPOSE:To easily separate the protective cover used when the subject epitaxial growth is performed by a method wherein a substrate housing groove shallower than the substrate thickness and another substrate housing groove deeper than the substrate thickness are provided on a growing boat, and the substrate whereon the protective cover was tightly contacted is shifted between the substrate housing grooves immediately before the epitaxial growth is performed. CONSTITUTION:The substrate housing groove 20 shallower than the thickness of the InP substrate 23 and the substrate housing proove 22 deeper than the substrate 23's thickness are provided on a substrate holder 21, an undoped InP polycrystalline wafer 24 is tightly contacted to the substrate 23 as a protective cover, and the substrate is arranged in the housing groove 20. When the epitaxialy growth is performed, a control stick 27 is slidingly moved, and the substrate 23 is moved to the housing groove 22. At this time, the protective cover can be removed easily from the substrate 23 by having the width of the protective cover wider than that of the housing 22. Then, the control stick 27 is continuously moved, and the epitaxial growth is started by contacting the substrate 23 to a melt 26 to be used for growing. Accordingly, the exfoliation of the InP can be prevented because the substrate 23 is protected by the protective cover up to the moment immediately before the performance of the epitaxial growth.
申请公布号 JPS57124422(A) 申请公布日期 1982.08.03
申请号 JP19810009381 申请日期 1981.01.23
申请人 SUMITOMO DENKI KOGYO KK 发明人 NISHIZAWA HIDEAKI
分类号 H01L21/208;C30B19/06;(IPC1-7):01L21/208 主分类号 H01L21/208
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