SOLID-STATE IMAGING DEVICE

摘要

SOLID-STATE IMAGING DEVICE A solid-state imaging device has in one major surface region of an identical semiconductor substrate, photoelectric conversion elements arrayed in two dimensions, vertical switching metal-insulator-semiconductor field effect transistors and horizontal switching metalinsulator-semiconductor field effect transistors which select the photoelectric conversion elements. Vertical and horizontal scanning circuits turn "on" and "off" the switching transistors. The device is characterized in that the vertical switching metal-insulator-semiconductor field effect transistors which are not selected are put into a deeper cutoff state, i.e., that the major surface regions of the semiconductor substrate corresponding to gate electrodes of these vertical switching metal-insulator-semiconductor field effect transistors are put into an accumulation level.