| 摘要 |
PURPOSE:To easily perform a microscopic work on SiC by a method wherein an ion beam etching is performed using the mixture gas of CF4 and O2. CONSTITUTION:When the etching is performed using the mixture gas of the CD4 and the O2, as the carbon layer to be formed on the face of an SiC sample is reacted to O2 and converted to Co or CO2, the surface of the SiC sample and the etching rate is increased. When the mixture rate of the P2 is 4%, the maximum etching rate can be obtained. In the course of etching process, a mask consisting of a Cr thin film is formed on the surface of the SiC layer 2 of a graphite substrate 1, and an etching is performed through the intermediary of a mask 3 using reactive ion beam of the mixed gas of CF4+O2. |
