| 摘要 |
PURPOSE:To shorten the processing time of sintering as well as to prevent the punch-through of the electrode material for the subject semiconductor device by a method wherein infrared rays are irradiated on the main surface of the semiconductor substrate whereon an electrode material was evaporated. CONSTITUTION:The electrode material such as aluminum and the like is evaporated on the main surface of the semiconductor substrate 1, and after patterning is performed, the substrate is arranged in a quartz pipe 2. Infrared ray lamp devices (tungsten lamp, for example) 4 are arranged at the upper and the lower parts on the outside of the quartz pipe 2, and an incoherent beam of light with a wavelength range of 0.4-4.0mum is irradiated from the lamp device 4. This irradiated beam of light is reflected by a parabolic reflecting mirror 5, and uniformly irradiated on the semiconductor substrate 1. A high-temperature and short-time heat treatment is performed by heating up the electrode material with the irradiated beam of light. Accordingly, the diffusing into the semiconductor of the electrode material can be suppressed, and an excellent ohmic contact having no punch-through can be obtained for a shallow junction too. |
