发明名称 HALFGELEIDERINRICHTING MET GUNN-EFFECT.
摘要 1,113,445. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. 21 May, 1965 [12 June, 1964], No. 50949/67. Divided out of 1,113,442. Heading H1K. The subject matter is identical with that of Specification 1,113,442 but the claims relate to a body of appropriate material having electrodes defining the extremities of at least two distinct current paths in the body, in particular a bifurcated body. As shown in Fig. 17e a high field travelling domain may be initiated at either A or B and propagated toward a terminal at the right-hand end of the Figure where it is dissipated, or initiated at the latter end and propagated in one or other of the paths terminating at A and B.
申请公布号 NL169661(C) 申请公布日期 1982.08.02
申请号 NL19650007296 申请日期 1965.06.09
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION TE ARMONK, NEW YORK, VER. ST. V. AM. 发明人
分类号 H01L47/02;H03B9/12;H03K3/02;H03K3/80;H03K19/02;(IPC1-7):H03K3/35;H03K5/06;H03K5/14;H03K19/08;H03K19/20 主分类号 H01L47/02
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