| 摘要 |
<p>PURPOSE:To achieve the best setting of a readout voltage for storage holding time, by controlling the readout voltage of a nonvolatile memory by an inverter circuit consisting of a nonvolatile memory which has nearly the same characteristics with said memory. CONSTITUTION:A load resistance having a little bit less resistance value than the load resistance 4 of a nonvolatile MNOS transistor (TR) 9 for data storage is connected and when the readout voltage of a nonvolatile MNOSTR8 having a little bit lower readable range than the TR9 and nearly the same characteristics with the TR9 is small and the TR is turned off, an MOSTR11 forming an inverter together with the TR9 and an MOSTR10 is turned off. consequently, a capacitor 13 for integration is charged up to a prescribed voltage, and then the TRs 8 and 9 turns on through a circuit block 14 for control, thereby discharging the capacitor 13. Therefore, the readout voltage of the TR9 is set automatically to the best desired value for storage holding time, and the storage holding time of the nonvolatile memory is improved substantially.</p> |
