| 摘要 |
PURPOSE:To continuously form a P-I-N junction in the same reaction furnace by applying induction energy to a semicondutor reaction gas to crystallize the gas and growing a film on the surface to form a film with the product of the reaction. CONSTITUTION:A substrate 10 having a surface to be formed with an electrode as the surface of the electrode is filled in a reaction tube, and is heated from the outside of the tube in a range of 100-450 deg.C via a resistance heating furnace 8. Induction energy is applied to electrodes 3, 3' by applying high frequency energy of 40-200W of power to the electrodes. The reaction gas is introduced from tubes 4-6, the gas in the furnace is adjusted via needle valve and stop valve 12, and is exhausted via a rotary pump 13, and the pressure during the reaction is maintained at the pressure of 10<-3>-10Torr. In this manner, an N type semiconductor having an electroconductivity of higher than 10<-2>(OMEGAcm)<-1>, a semiconductor having an electroconductivity of higher than 10<-1>(OMEGAcm)<-1>, and a P type semiconductor having electroconductivity of higher than 10<-2>(OMEGAcm)<-1> are gradually laminated on the substrate 10 in the same furnace. |
