| 摘要 |
PURPOSE:To improve magnetic characteristic for preventing deterioration of the magnetic characteristic by a method wherein after forming a conductive pattern, an insulator film of organic substance is deposited, on which an insulator film of inorganic substance and a permalloy film are produced successively. CONSTITUTION:A SiO2 film as an insulator film of inorganic substance 2 is formed by RF sputtering process on a garnet film 1 for a bubble device, and further an Al-Cu conductive film is coated on the SiO2 film. Next, a film 3 is formed in a desired pattern by fine pattern technology, coating with polyimide resin 4 as the insulator film of organic substance by spin coatin process. Then, it is cured, for example, at 360 deg.C for 120min. After this, the SiO2 film 6 and the permalloy film 5 are formed successively by RF sputtering, and a permalloy pattern is produced by fine pattern technology. A protective film is provded all over the surfaces including the pattern 5, and parts of the protective coating at bonding pads and the insulator film of organic substance are removed for forming a magnetic bubble device. |
