| 摘要 |
PURPOSE:To improve the yield of a semiconductor device in an IC or the like having a high resistance made of polysilicon, by covering an insulating film which prevents a phosphorus-dope from a PSG film on the upper surface of a resistor, thereby preventing the characteristic change of the resistor and the shortcircuit via a pinhole. CONSTITUTION:A polysilicon layer 3 and wiring polysilicon layers 4, 5 are formed to become resistors via an SiO2 film 2 on a P type substrate 1 formed with an element such as a diode, and a PSG film 6 is covered thereon. Then, the film 6 on the layers 3, 5 is removed, B ions are then inplanted and doped, and a CVD SiO2 film 8 is then covered thereon. Therefore, the doped impurity is annealed at a high temperature. Subsequently, a hole is formed at the connecting part of the electrode contact part with the wire, and aluminum electrodes 9-12 are formed. In this manner, when the doped impurity is redistributed and diffused (annealed), it can prevent the doping of the phosphorus scattered from the PSG film in the resistor, thereby preventing the variation in the electric characteristics due to the change in the resistance value. Even if a pinhole 7 is produced in the film 6, the latter can be insulated via the film 8, thereby preventing the shortcircuit trouble. |
