| 摘要 |
PURPOSE:To reduce the cost of a semiconductor device and to increase the reliability of the device by employing for a thermal press bonding material a silver wire sulfided on the surface and covered with silver sulfide, thereby reducing the disconnection trouble ratio as compared with that of a gold wire and preventing the migration. CONSTITUTION:An Ag wire is used as a bonding material instead of the conventional Au wire. The Ag wire is exposed, for example, with hydrogen sulfide atmosphere to form a silver sulfide film on the surface, and when a ball is formed by a hydrogen torch at the bonding time, the sulfide of the ball is reduced, and is thermally pressed. Or, after the bonding, the ball is exposed with hydrogen sulfide atmosphere to form a sulfide on the surface. In this manner, the disconnection trouble ratio in the recrystallization boundary of the ball can be reduced as compared with the case of using the Au material, and an Ag migration can be prevented due to the covering of the sulfided silver, thereby reducing the short circuit trouble ratio. Further, the cost of the material can also be reduced. |
