| 摘要 |
PURPOSE:To provide a semiconductor device which has good connecting property and high reliability by covering the surface of a substrate formed with a plurality of wire conductor layers having external conductor connecting parts with a polyimide resin film, exposing the connecting parts and wire bonding them. CONSTITUTION:A base region 2, an emitter region 3 and a guard ring region 4 are diffused, for example, in an n type substrate 1, thereby forming a high power transistor. A hole is opened at an oxidized film 5 on the surface of the substrate, aluminum wire layers 6-7 are formed, and a polyimide resin film 9 is coated on the overall surface by a rotary coating method. Subsequently, a resin film 9 on the pads 6a, 7a is photoetched, and wires 10, 11 made of Au or Al are bonded and connected to the aluminum exposed surface. Since the polyimide film as the protective film has excellent insulating and heat resistant properties and no reacted product is produced on the surface of the aluminum at the etching time, the connecting property of the wire to the conductor is good, and high reliability can be provided in the device. |
