| 摘要 |
981,301. Semi-conductor devices. COMPAGNIE GENERALE D'ELECTRICITE. July 18, 1961 [July 19, 1960], No. 26070/61. Heading H1K. In a semi-conductor rectifier arrangement having self-protection against over-voltage and consisting of a PN junction having metal electrodes M 1 , M 2 (Fig. la), attached to the semiconductor layers, the junctions between M 1 -p and n-M 2 are so arranged that they inject minority charge carriers into the adjacent semi-conductor layers when the junction is reverse biased so that above a particular value of reverse current, the rectifier arrangement becomes highly conducting. The distribution of impurities in the semi-conductor layers p and n which leads to the above-mentioned selfprotection is indicated in Fig. 1b and the characteristic curve for such an arrangement is shown in Fig. 4. It is postulated that the irregularity of the crystal lattice in the junction between the electrode and the semi-conductor produces permitted energy levels between the conduction and valence bands and provided the semi-conductor is only weakly doped in the vicinity of this junction, minority carriers injected therefrom will have a sufficient lifetime to reach the PN junction. Thus when the rectifier is reverse biased electrons are emitted from the junction 2 and pass through the PN junction 1 to the other junction 3 where they liberate holes, these in turn liberating more electrons when they reach junction 2. Above a certain value of reverse current, this mechanism is accelerated and the arrangement becomes highly conducting in the reverse sense, but is prevented from becoming self-destructive by the provision of suitable resistors (fixed or proportional to current) in the external circuit. A PNP and a NPN junction diode are also discussed with reference to Figs. 5a, 5b and 7a, 7b (not shown), the characteristic of such a device being shown in Fig. 6. By connecting an additional electrode to the extra P layer of such a PNP device just referred to (Fig. 8, not shown) and applying a positive potential thereto it can be arranged that the device becomes highly conducting in the forward sense vis. working point B on the characteristic shown in Fig. 6. In another arrangement (Fig. 9) a circular groove 5 is cut into the electrode M 2 and p-layer P 2 and electrodes S 5, S 4 are connected to the electrode and a strongly n-doped contact 6 in the n-layer, respectively. If S 5 is made positive relative to S4, contact 6 injects electrons into layer n and the portion of the layer P 2 within the groove injects holes into the n-layer. Thus with the rectifier in either of the states A or C (Fig. 6) this additional injection of charge carriers will cause it to change into a highly conducting state in either the forward or reverse senses vis. working points B or D, respectively. Such devices may be produced by a tempering operation, prior to coating with the metal, in which acceptors are diffused-out from the surface of the p-layer and donors from the n-layer and the electrode is then attached:- by purifying the surface of the germanium or silicon crystal in a high vacuum by bombarding it with ions of a rare gas and then applying by vaporization a thin coating of tin or indium; by etching the crystal surface in an electrolyte and then applying the metal coating electrolytically; or by etching the crystal surface in a fluid free from impurity centres and then driving off this fluid by melting the metal on to the surface. The electrodes may be further coated electrolytically with copper. |
