| 摘要 |
PURPOSE:To improve the reliability in electron beam exposure in a glass mask for manufacturing semiconductor devices made by electron beam exposure, by forming the shape of a substrate to a polygonal shape having more edges than 5 and providing an origin mark, etc. by making use of the space at the corners. CONSTITUTION:A pattern is made by electron beam exposure. The shape of a glass mask 2 for manufacturing semiconductor devices is made to have >=5 corners and a Faraday cup 5 and an origin mark 6 of an electron beam exposure device are located in the space 9 of the corner of the glass. As a result, the cup 5 and mark 6 are provided in the outside of the electron beam exposure device, whereby vacuum leakage is prevented and the reliability of driving parts is improved. |
