| 摘要 |
PURPOSE:To improve the temperature characteristics of a buried hetero type semiconductor laser by setting an interval between the active layer and the diffused layer of the laser to a value lower than the prescribed value, thereby reducing a leakage current and the temperature dependency of a threshold current. CONSTITUTION:A thin p type CaAlAs buried first layer 7 is formed on a substrate 1, and a thick n type GaAlAs buried second layer 8 is formed on the layer 7. The side from the intermediate part of the multilayer first layer 3 to the multilayer fourth layer 6 is covered with a layer 8, and the side from the intermediate part of the layer 3 to the layer 6 is covered with the layer 8. Then, an insulating layer 9 is formed on the upper surface of the layer 8, and an anode electrode 10 is formed on the upper surface of the layers 6 and 9. Further, a diffused layer 11 diffused with Zn for the purpose of improving the ohmic property of with the electrode 10 is formed on the surface layer of the layer 6 covered with the layer 9. Then, an interval (d) between the active layer 5 and the diffused layer 11 made of GaAs for guiding the laser light on the surface of the layer 4 is set to a value lower than 1.2mum thereby reducing the leakage current, reducing the temperature dependency of the threshold current, and improving the temperature characteristics. |
