发明名称 TRANSISTOR
摘要 PURPOSE:To prevent the decrease in the safety operation region (ASO) in a transistor by providing an emitter electrode on an emitter region at an interval from the connection part of a diffused resistor to the emitter region, thereby limiting the emitter operation of the resistor. CONSTITUTION:An interval L is provided between the connecting part of a strip region 6 becoming a diffused resistor to an emitter region 3 and an emitter electrode 4 on the region 3. In other words, the electrode 4 is pulled in from the end of the region 3. Accordingly, since a current flowing to the electrode from a P type base layer 2 through a region 6 has to pass a resistor 7, this emitter current is limited to small value. In this manner, since the operation of the narrow emitter 62 as an emitter becomes small, it can avoid the decrease in the ASO in this part, thereby maintaining the ASO characteristics as a transistor.
申请公布号 JPS57122569(A) 申请公布日期 1982.07.30
申请号 JP19810008250 申请日期 1981.01.22
申请人 FUJI DENKI SEIZO KK 发明人 ITOU SHINICHI;KOBAYASHI SUSUMU;MATSUO MUTSUMI
分类号 H01L27/04;H01L21/331;H01L21/822;H01L21/8222;H01L27/06;H01L29/72;H01L29/73 主分类号 H01L27/04
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