| 摘要 |
PURPOSE:To eliminate the production of an overhung structure at the peripheral side of a polycrystalline Si pattern utilized as an electrode wire in a semiconductor device by forming a dense Si oxidized film at the peripheral side face of the pattern. CONSTITUTION:An n type epitaxial layer 102 is grown on an n<+> type Si layer 101, and an n<+> type diffused layer 103 is then formed. Then, an Si nitrided film 107 is accumulated on the overall surface, a hole 108 is formed, and a p type interior base region 109 is then formed through the hole. Then, a polycrystalline Si layer 110 doped with an n type impurity is accumulated on the overall surface. Subsequently, a layer 110 is patterned to form n<+> type polycrystalline Si patterns 1111, 1112 partly existing in the hole 108. Subsequently, oxidized films 1121, 1122 are formed around the patterns 1111, 1112. At this time, the n<+> type impurity is diffused from the pattern 1111 to form n<+> type collector region 113. Thereafter, the film 107 is diffused. At this time the film 107 is selectively removed, and windows 1141, 1142 are formed in self-aligning manner. Then, an electrode wire insulated with the Si oxidized film is formed. |
