| 摘要 |
A method for manufacturing a hybrid integrated circuit device comprising a step of forming an Al2O3 layer on a metal substrate, a step of forming on the Al2O3 layer a resist layer having a pattern opposite to that of a copper layer which will be formed on the Al2O3 layer by a later step, a step of forming the copper layer on the Al2O3 layer using the resist layer as a mask, a step of impregnating thermosetting material into both the Al2O3 layer and the copper layer, and a step of providing at least one semiconductor element on the copper layer. |
