| 摘要 |
PURPOSE:To stabilize the P-N juction of a semiconductor device by forming a conductive layer electrically independently connected or connected to one potential in a protective film which covers the P-N junction exposed on the surface of a substrate. CONSTITUTION:In an N-P-N type transistor, a conductive layer 6 made of refractory material such as Mo, W or the like is formed in a passivation film 4 which covers the P-N junction on the surface of an emitter region 3 and a base region 2. One end of the layer 6 is exposed from the end face of the film 4, is conducted with an emitter electrode, but is not conducted with a base electrode. In this manner, even if a wiring layer does not extend due to the alignment on the protective film on the P-N junction exposed on the surface, the protective film becomes the same potential as the emitter electrode, thereby stabilizing the P-N junction. |
