| 摘要 |
PURPOSE:To reduce unevenness of plasma process of a plasma process device by a method wherein gas discharging holes of which the area of opening is adjustable are provided at the outside circumferential parts of the positions on a susceptor to be arranged with wafers. CONSTITUTION:The gas discharging holes 9 are provided at the outside circumferential parts of the positions to be arranged with the wafers on the susceptor 3 being put the wafers 6A, 6B, etc., thereon, and adapters 10A to regulate the area of opening are inserted in the desired positions to unify flow of process gas. Accordingly because relations of reaction gas to the respective wafers are unified, unevenness in plasma processing is reduced. |
