| 摘要 |
<p>PURPOSE:To obtain sufficient electrostatic destruction resistance of a semiconductor device by providing an MISFET between a clamping resistor and a pad, discharging the charge through the FET, and reducing the area of a clamping diode. CONSTITUTION:A parasitic MOSFET 5 is arranged between the pad 2 and the clamping resistor 4 in a region of approximately equal in potential to a bonding pad 2, a high voltage is applied to between the gate and drain 6 of the MOSFET 5 in the amount corresponding to the potential difference produced across the clamping resistor 4, and the field oxidized film 15 of the MOSFET can be inverted to an N type. Accordingly, the MOSFET becomes ON state due to the induction of the channel, and the charge at the clamping diode 3 side is discharged through an aluminum wire 14, the channel of the MOSFET and a wire 13. In this manner, the charge can be effectively discharged by controlling the threshold voltage of the MOSFET, thereby increasing the electrostatic destruction resistance of the diode.</p> |
