| 摘要 |
PURPOSE:To reduce unevenness of plasma process of a plasma process device by a method wherein the area of opening or density of distribution of gas discharging holes provided in a susceptor is made to differ in accordance with the position thereof. CONSTITUTION:The gas discharging holes 9A, 9B, etc., are provided at the outside circumferential parts of the positions to be arranged with wafers on a susceptor 3 being put the wafers 6A, 6B, etc., thereon, and the area of opening or density of distribution of the holes thereof is made to differ in accordance with the positions on the susceptor to control flow quantity of gas to be discharged through the holes thereof. Accordingly because relations of reaction gas to the respective wafers are unified, unevenness in plasma processing is reduced. |
