| 摘要 |
PURPOSE:To prevent invasion of contaminations from the circumferential edge of the electrode part and to prevent deterioration of characteristic of a semiconductor device by a method wherein the device is constituted as to make a passivation film to bury the interval between the inside circumferential face of a window for contact of electrode and the outside circumferential face of the electrode. CONSTITUTION:The interval between the outside circumferential lower edge of the emitter electrode 6 and the inside circumferential lower edge of the window 10 for contact of electrode is made to about 0.5mum, and the inside circumferential face of the window 10 for contact of electrode and the outside circumferential face of the emitter electrode 6 facing thereto are made to have structure extending toward the upper part. As a result, the passivation film 7 can be formed continuously without generating disconnection at a step part, the film reaches surely the interval between the inside circumferential face of the window 10 for contact of electrode and the outside circumferential face of the emitter electrode 6, the exposed emitter region is covered completely. Accordingly contamination from the outside can be prevented. |
