| 摘要 |
PURPOSE:To manufacture continuously various kind multilayer thin films of semiconductor device having favorable characteristic with a simple process by a method wherein molecular beams of respecitve evaporation sources are irradiated to be evaporated on a low temperature substrate in a superhigh vacuum. CONSTITUTION:The molecular beam of an Si source 124 is generated by an electron beam 123 radiated from an electron gun system 122 in a vacuum vessel 11, and the Si thin film is made to grow epitaxially on the glass substrate 13. The insulating film is formed on the Si thin film next. When an oxide film is made to adhere as the insulating film, for example, the molecular beam of SiO2 is formed by the electron gun being the same kind width Si, and is made to be accumulated on the polycrystalline film. Molecules of SiO2 evaporated and converted into gas pass through a small aperture 141 formed in a shroud 14 to reach the glass substrate 13. |
