| 摘要 |
PURPOSE:To improve intensity and heat radiating characteristic of a semiconductor device by a method wherein an insulating layer formed with a metal oxide impregnated with insulating resin is provided on the face of a metal substrate opposite from the face to put a semiconductor chip thereon. CONSTITUTION:A metal thin layer 22 of Ni, Au, etc., is provided on the face on one side of the metal substrate 20, the semiconductor chip 24 of power transistor, etc., is put thereon interposing a solder layer 23 between them, another side electrode and an outside lead out wire 25 are connected with a fine metal wire 26, the insulating layer 21 consisting of the metal oxide of alumina ceramic powder, etc., impregnated with insulating resin is provided on the face on the other side of the metal substrate 20, and the whole is sealed with insulating resin 27. Accordingly dielectric intensity and heat radiating characteristic are enhanced and mechanical intensity is also enhanced. |
