| 摘要 |
PURPOSE:To constitute so that every IC has the same characteristic and no adjusting terminal is required at all, by using the physical quantity of kT/q as reference voltage or a reference potential difference. CONSTITUTION:In 2 MOS transistors, the ratio ID/(W/L) of a drain current ID to a channel part pattern ratio W/L(W and L denote channel length and channel width, respectively) is made different. For instance, when currents flowing to the first MOST and the second MOST are denoted as I1, I2, respectively, an expression VGS=(nkT/q)ln(W/L)MOST2/(W/L)MOST1 is formed by I1=I2, and gate-source voltage of the MOS transistor becomes a value being equal to kT/q. that is to say, B is voltage corresponding to kT/q and becomes voltage which is not influenced storongly by a characteristic of the element. |
