| 摘要 |
PURPOSE:To prevent the contamination of a semiconductor integrated circuit device with heavy metal ions such as Cu externally by intentionally introducing lattice strain to the surface of a substrate becoming a non active region or a scribing region of a semiconductor element, thereby causing a gettering effect. CONSTITUTION:A scribing region 4 is formed between a plurality of regions 3 becoming a chip of a semiconductor substrate 1, ions are injected to the region, and strong lattice strain 2 is produced at the region 4. In this manner, lateral gettering effect is produced, thereby gettering the heavy metal ions without damage to the active region, and contamination can be avoided. |
