| 摘要 |
PURPOSE:To secure the safety in a post-heat treatment by employing trimethyl arsine or triethyle arsine having weak toxicity as an As source when As ions are implanted in a compound semiconductor substrate. CONSTITUTION:When As ions are implanted in a semi-insulating GaAs substrate, (CH3)3As or (C2H5)3As is used as an As source. A carrier gas is Ar and H2. In this manner, no danger occurs like AsH3 when an ion implanted layer is heat treated to be activated, but safety can be secured. Simultaneously, heat treating device can be readily handled. Since mixture gas including Ar gas is used, uniform and good reproducible activation can be performed. |
