| 发明名称 |
Method of restoring semiconductor device performance |
| 摘要 |
Contaminant metal residue on an organic passivation layer of a semiconductor device is removed by plasma etching thereof whereby the performance of the device is restored.
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| 申请公布号 |
US4341594(A) |
申请公布日期 |
1982.07.27 |
| 申请号 |
US19810238726 |
申请日期 |
1981.02.27 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
CARLSON, RICHARD O.;YERMAN, ALEXANDER J. |
| 分类号 |
H01L21/02;H01L21/306;H01L21/3213;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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